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机译:基于氮化物半导体的LED和HFET的新变化
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284-3072, USA;
rnDepartment of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284-3072, USA;
rnDepartment of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284-3072, USA;
rnDepartment of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284-3072, USA;
rnFluctuation Research Laboratory, Semiconductor Physics Institute, A. Gostauto 11, Vilnius 01108, Lithuania;
rnDepartment of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284-3072, USA;
nitride semiconductors; carrier recombination; carrier scattering; LEDs; HFETs;
机译:具有载流子限制层的基于氮化物的HFET
机译:通过光增强化学湿蚀刻制造的基于氮化物的肖特基二极管和HFET
机译:AlGaN / GaN HFET的低噪声和低失真性能-氮化物基器件在前端的应用
机译:基于III-V族氮化物半导体的Er掺杂的红外LED
机译:通过分子束外延和簇束外延发展III-氮化物半导体,以及基于氮化铟镓MQW的LED的制造。
机译:氮化物半导体分子束外延中的液滴控制生长动力学
机译:氮化物HFET的耦合GaN / ALN / ALN / GAN通道中的电子传输
机译:热载流子产生的热耗散对新型氮化物基高速HFET工作频率和可靠性的限制