Infrared LEDs Based on Er doping of III-V nitride semiconductors

摘要

The III-V nitride semiconductor materials are the focus of intense world-wide research due to the recent development of blue-green light emitting diodes (LEDs) and blue laser diodes (LDs). The impact of these components on optical display systems, optical storage, and white lighting methods appears to be huge. Another area in which the III-V nitrides may be important is in the development of infrared (IR) LEDs and optical amplifiers. Wide gap semiconductors, such as the III-V nitrides, doped with rare earth atoms, offer the prospect of very stable, temperature-insensitive, LEDs and optical amplifiers operating at the primary wavelengths, 1.54 #mu#m and 1.3 #mu#m, used for optical communications. A new class of optical amplifiers and optical interconnects, based on rare earth-doped III-V nitride semiconductor materials, may lead to major improvements in various optoelectronic systems. In this paper we present results concerning a novel IR LED involving Er-doping of III-V nitride semiconductors. The LED is a hybrid device consisting of an Er-doped III-V nitride film that is optically pumped by a green InGaN LED. Aspects of Er incorporation in the III-V nitride host, photoluminescence properties, and prototype device structures operating at 1.54 #mu#m are described.