NITRIDE-BASED III-V GROUP SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, METHOD OF MANUFACTURING NITRIDE-BASED III-V GROUP SEMICONDUCTOR SUBSTRATE, AND LOT OF NITRIDE-BASED III-V GROUP SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a nitride-based III-V group semiconductor device which has excellent device characteristics and has a good productivity and its manufacturing method, and further provide a method of manufacturing a nitride-based III-V group semiconductor substrate used for the same, and a lot of the nitride-based III-V group semiconductor substrates.;SOLUTION: The nitride-based III-V group semiconductor device is in the form of a chip, and includes an epitaxial layer having a device structure on the nitride-based III-V group semiconductor substrate, with at least one set of parallel side faces of the epitaxial layer as cleavage planes. About the substrate, a low index crystal plane closest to the substrate surface is inclined against the substrate surface, that is, the low index plane has an off-angle, and the off-angle direction in which the low index plane is inclined is parallel to one of equivalent cleavage planes of the substrate. The cleavage planes of the epitaxial layer are on the same plane as the cleavage plane of the substrate parallel to the off-angle direction of the substrate.;COPYRIGHT: (C)2005,JPO&NCIPI