Visible and Infrared (1.54 micrometers) LED Based on ER-Doped Porous Si

摘要

Phase I demonstrated strong room-temperature 1.54 micrometers luminescence fromvisible light-emitting porous Si doped with erbium. Er was implanted with a dose of 10(exp 15)/sq cm at 190 keV into porous Si, bulk Si, GeSi, quartz, and sapphire. The highest emission intensity was observed for porous Si samples which were annealed at 650 deg C and had a peak concentration of 1.5 x 10(exp 20) Er/sq cm. However, no IR emission was observed from Er in bulk Si, GeSi, quartz, and sapphire. Our results show that the high PL efficiency in Er-implanted porous Si originates from Er confined in < 5nm-diameter Si nanostructures. In these samples, only an insignificant decrease in PL intensity was observed from 77 to 300K. In addition, Phase I work clearly indicates that photoluminescence (PL) intensity is almost comparable to In(0.53)Ga(0.47)As material, which is used for commercial infrared (IR) light-emitting diodes (LEDs). These results suggest that Er:porous-Si electroluminescent devices with practical quantum efficiency at 300K are feasible. Porous Si, Visible light emission, Er Implantation, Infrared emission, Nanostructures photoluminescence, Electroluminescence, Room temperature, Fiber optics.