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QUASI-OMNIDIRECTIONAL ANTI-REFLECTIVE STRUCTURE BASED ON POROUS SILICON DIELECTRIC MULTILAYERS FOR THE NEAR INFRARED, VISIBLE AND MIDDLE ULTRAVIOLET REGION OF THE ELECTROMAGNETIC SPECTRUM
QUASI-OMNIDIRECTIONAL ANTI-REFLECTIVE STRUCTURE BASED ON POROUS SILICON DIELECTRIC MULTILAYERS FOR THE NEAR INFRARED, VISIBLE AND MIDDLE ULTRAVIOLET REGION OF THE ELECTROMAGNETIC SPECTRUM
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机译:基于多孔硅介电多层层的准全向反折射结构,用于电磁光谱的近红外,可见和中紫外区域
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摘要
The invention relates to an antireflective structure based on porous silicon multilayers stacked in a one-dimensional manner. This layer can reflect less than 4% of incident light at any angle, i.e. it is not dependent on the position in which it is oriented. This is achieved for a wavelength range from 200 nm to 2000 nm and with a total physical thickness of only 510 nm. The structure comprises 51 layers having gradual porosity values ranging from 92 to 38 %. The length of each layer is constant and equal to 10 nm and the profile of the refractive index varies by means of a monotonically increasing envelope function of the form f(z)=n0+(nF-n0)(z/L)k,with z the depth of the layer. The device is made using electrochemical anodization in an electrolytic solution of hydrofluoric acid and ethanol, attacking silicon wafers in a galvanostatic manner in a controlled interface.
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