METHOD FOR MANUFACTURING HETEROJUNCTION FIN STRUCTURE, SEMICONDUCTOR DEVICE HAVING HETEROJUNCTION FIN STRUCTURE, METHOD FOR MANUFACTURING FIN-HFET BASED ON HETEROJUNCTION FIN STRUCTURE, AND FIN-HFET BASED ON HETEROJUNCTION FIN STRUCTURE

摘要

The present invention is to disclose a method for manufacturing a heterojunction fin structure, a heterojunction fin structure, a method for manufacturing a fin-HFET based on a heterojunction fin structure, and a fin-HFET based on a heterojunction fin structure. The method for manufacturing a heterojunction fin structure comprises: sequentially laminating a first GaN layer, a first AlGaN layer, and a masking layer; forming an AlGaN fin structure by performing side etching on a partial area of the GaN layer, the first AlGaN layer, and the masking layer laminated sequentially; forming an etching barrier around the AlGaN fin structure and performing vertical etching on a part of the AlGaN fin structure; regrowing a second GaN layer and a second AlGaN layer for forming a heterojunction fin structure in the vertically etched area; and removing the etching barrier. Accordingly, it is possible to manufacture a heterojunction fin structure.;COPYRIGHT KIPO 2016