- CONDUCTOR-SEMICONDUCTOR LATERAL HETEROJUNCTION STRUCTURE METHOD OF THE CONDUCTOR-SEMICONDUCTOR LATERAL HETEROJUNCTION STRUCTURE SWITCHING DEVICE HAVING THE CONDUCTOR-SEMICONDUCTOR LATERAL HETEROJUNCTION STRUCTURE AND METHOD OF MANUFACTURING A 2 DIMENSIONAL CONDUCTIVE FILM

摘要

Disclosed is a conductor-semiconductor side surface heterojunction structure. The conductor-semiconductor side surface heterojunction structure comprises: a first region formed of crystalline molybdenum disulfide (MoS_2) to have semiconductor characteristics; and a second region formed of crystalline molybdenum carbide (MoS_2) to have conductor characteristics. Crystals of the molybdenum carbide (MoS_2) in the second region is formed to be epitaxially grown from the crystals of the molybdenum disulfide (MoS_2) in a side surface in the first region.