METAL OXIDE HETEROJUNCTION STRUCTURE METHOD OF MANUFACTURING THE METAL OXIDE HETEROJUNCTION STRUCTURE AND THIN FILM TRANSISTOR HAVING THE METAL OXIDE HETEROJUNCTION STRUCTURE

摘要

A metal oxide heterojunction structure comprising an indium oxide layer and an aluminum oxide layer in contact with the indium oxide layer, Wherein an interfacial layer is provided between the indium oxide layer and the aluminum oxide layer, the interfacial layer including indium ions, aluminum ions and oxygen ions, and providing a charge transport channel.