Performance in pfet - transistors with a metal gate stack with a large ε by improving of the dopant one chlusses

摘要

In a p - channel transistor with a metal gate electrodes structure with a large ε is a better dopant profile at least in the threshold value setting ends of semiconductor material, for example a silicon / germanium - material, achieved by a diffusion blocking locations, for example fluorine in front of the production of the threshold value setting ends of semiconductor material is installed. Consequently, the drain - and source expansion regions with a high dopant concentration are provided, such as this to generate the desired miller - capacity is required, without an undesirable dopant diffusion below the threshold value setting end semiconductor material is caused, which otherwise could result in increased leakage currents and a greater risk of breakdowns would lead.