Department of Electronics and Communication Engineering, Siksha ‘O’ Anusandhan (Deemed to be University), Bhubaneswar, Odisha, 751030, India;
Department of Electronics and Communication Engineering, Siksha ‘O’ Anusandhan (Deemed to be University), Bhubaneswar, Odisha, 751030, India;
Department of Electronics and Communication Engineering, Siksha ‘O’ Anusandhan (Deemed to be University), Bhubaneswar, Odisha, 751030, India;
Department of Electronics and Communication Engineering, Siksha ‘O’ Anusandhan (Deemed to be University), Bhubaneswar, Odisha, 751030, India;
Department of Electronics and Communication Engineering, Siksha ‘O’ Anusandhan (Deemed to be University), Bhubaneswar, Odisha, 751030, India;
Department of Electronics and Communication Engineering, Siksha ‘O’ Anusandhan (Deemed to be University), Bhubaneswar, Odisha, 751030, India;
Semiconductor process modeling; Logic gates; Mathematical model; Solid modeling; Transistors; Nanoscale devices; Metals;
机译:在存在随机离散掺杂剂和随机界面陷阱的情况下,16nm栅极高k /金属栅极MOSFET的物理和电气特性波动的统计设备仿真
机译:窄栅全能硅纳米线晶体管中沟道长度和截面对随机离散掺杂引起的变异性影响的量子传输研究。
机译:结非突变对本征沟道三栅极金属氧化物半导体场效应晶体管中随机离散掺杂引起的可变性的影响
机译:随机离散掺杂剂和金属栅极粒度存在下堆叠纳米线晶体管的性能预测
机译:纳米N沟道和P沟道金属氧化物半导体场效应晶体管的超薄氧化物和氮化物/氧化物堆叠的栅极电介质研究
机译:使用氧化锆纳米线作为高k栅极电介质的高性能顶门石墨烯纳米晶体管
机译:随机分布掺杂剂对$ OMEGA $ -GATE连接硅纳米线型晶体管的影响