Performance in pfet - transistors with a metal gate stack with a large ε by improving of the dopant one chlusses

摘要

A method with:Introduction of a diffusion of the blocking ends in a semiconductor region of a p - channel transistor;Forming a threshold value setting ends of semiconductor material on the semiconductor region, wherein the semiconductor region has the diffusion blocking locations;Forming a gate electrodes structure on the threshold value setting ends of semiconductor material, wherein the gate electrodes structure is a gate dielectric material comprises a first and second electrode material of the gate electrodes structure of a channel region in the threshold value setting separates the ends of semiconductor material;Introduction of dopants for drain - and source expansion regions - and the drain and source regions; andHeating of the p - channel transistor with the use of the diffusion blocking locations for suppressing a dopant diffusion under the channel region.