BEAM-INDUCED DEPOSITION OF LOW-RESISTIVITY MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a method of beam deposition to deposit a low-resistivity metal.;SOLUTION: A precursor capable of depositing low-resistivity metallic material of a methylated or ethylated metal such as hexamethylditin is induced toward a surface of a sample. A desired position on the surface of the sample is irradiated with a gallium focused ion beam and a tin film having a resistivity as low as 40 μΩcm is deposited on the position.;COPYRIGHT: (C)2012,JPO&INPIT