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Beam-induced deposition of low-resistivity material
Beam-induced deposition of low-resistivity material
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机译:束流诱导沉积低电阻率材料
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摘要
An improved method of beam deposition to deposit a low-resistivity metal. Preferred embodiments of the present invention use a novel focused ion beam induced deposition precursor to deposit low-resistivity metallic material such as tin. Applicants have discovered that by using a methylated or ethylated metal such as hexamethylditin as a precursor, material can be deposited having a resistivity as low as 40 μΩ·cm.
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