Characterization of deposited materials formed by focused ion beam-induced chemical vapor deposition using an AuSi alloyed metal source

摘要

A focused Ga ion beam (Ga FIB)-induced chemical vapor deposition (CVD) using phenanthrene as a source gas can produce three-dimensional structures in nanometer size which mainly made up of diamond-like carbon (DLC) or graphite with implanted Ga atoms inside them. Such incorporated Ga atoms can come out from, for example, bio-tools fabricated by the Ga FIB-CVD and those Ga might be toxic for living cells. From an application point of view, therefore, formation of Ga-free materials is desired especially in bio-related fields. We have reported the formation of narrow wires by FIB-CVD using Au or Si ions and explained the difference in the deposition rate of the materials between the Au and Si FIB-CVD methods by the electronic energy loss of those ions in the deposited material [1]. In the present study, characteristics of title deposited materials formed by the Au or Si FIB-CVD was investigated.