A NONVOLATILE MEMORY DEVICE USING CHARGE TRAPS OF SILICON-RICH OXIDES AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A non-volatile memory device using a charge trap of an overflowing silicon oxide film and a manufacturing method thereof are provided to utilize deformity as a charge storage trap by forming SiO2/SiOx/SiO2 memory device structures by ion beam sputtering deposition. CONSTITUTION: A tunneling SiO2 layer is formed on an n-type Si wafer. The tunneling SiO2 layer is formed by ion beam sputtering deposition. An overflowing silicon oxide film is formed on the tunneling SiO2 layer. A control oxide film is formed on the tunneling SiO2 layer. An Al electrode of a diameter of 200micrometers is deposited on a sample in order to measure capacitance-voltage of a metal-oxide-semiconductor capacitor.