Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices

摘要

Aluminum-doped gadolinium oxides $hbox{GdAlO}_{x}$ are proposed as a blocking oxide layer in charge-trap-type Flash memory cell devices. Greatly improved operation speed and charge retention properties have been demonstrated, compared to conventional $hbox{Al}_{2}hbox{O}_{3}$ blocking layer. The optimization of Al percentage in $hbox{GdAlO}_{x}$, as well as charge loss mechanism in the memory cell device, has also been systematically studied.