A method for the production of light decoupling grid structures in a semiconductor body and light emitting semiconductor body

摘要

It is a process for the production of light decoupling grid structures (115) in a semiconductor body (1) is specified. In the case of a process step, the semiconductor body (1) is provided, which a suitable for generating light active zone (120) contains. On a surface (111) of the semiconductor body (1) a mask layer (3) is produced. The mask layer (3) has a plurality of structural units (30), of which the position and size can be adjusted in a reproducible manner and is set in a targeted manner. The contours of the structural units (30) define a of the mask layer (3) uncovered portion (1111) of the surface (111) firmly. In a further method step, the semiconductor body (1) on the of the mask layer (3) uncovered portion (1111) of the surface (111) for the formation of the light decoupling grid structures (115) etched.In addition, a light emitting semiconductor body (1) is specified.