Trench - super junction - mosfet with a thin epi - process

摘要

A method for producing mosfet - devices with super junction, the high breakdown voltages (& 600 volts) with competing a low specific resistance, comprising the growing an epitaxial layer of a second conductivity type to a substrate of a first conductivity type, forming a trench in the epitaxial layer and growing a second epitaxial layer along the side walls and of the bottom of the trench. The second epitaxial layer is with a dopant of the first conductivity type doped. Mosfet - devices with super junction, the high breakdown voltages, comprise a first epitaxial layer of a second conductivity type, which by means of a substrate of a first conductivity type is arranged, and a trench which is formed in the epitaxial layer. The trench comprises a second epitaxial layer along the side walls and of the bottom of the trench is grown.