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机译:平面,超结和沟槽低压功率MOSFET的可靠性
DFMTFA DC1IM, University of Messina, Messina, Italy;
rnDFMTFA DC1IM, University of Messina, Messina, Italy;
rnDFMTFA DC1IM, University of Messina, Messina, Italy;
rnDFMTFA DC1IM, University of Messina, Messina, Italy;
STMicroelectronics, Stradale Primosole 50, Catania 95121, Italy;
rnSTMicroelectronics, Stradale Primosole 50, Catania 95121, Italy;
rnSTMicroelectronics, Stradale Primosole 50, Catania 95121, Italy;
rnSTMicroelectronics, Stradale Primosole 50, Catania 95121, Italy;
机译:沟槽深度对重复雪崩低压低电压离散功率沟槽nMOSFET可靠性的影响
机译:反复雪崩线键合低压离散功率沟道n-MOSFET的可靠性
机译:低导通电阻的非均匀100V超结沟槽功率MOSFET的设计
机译:栅极氧化物缺陷等级:平面和沟槽低压功率MOSFET技术之间的实验比较
机译:具有高击穿电压和低导通电阻的新型沟槽横向功率MOSFET
机译:使用双层门绝缘子在GaN-on-Si垂直沟槽MOSFET中:对性能和可靠性的影响
机译:反复雪崩的引线键合低压分立功率沟槽n-MOSFET的可靠性