Semiconductor device having an NMOS transistor and a PMOS transistor including a buried Si / Ge material to produce a tensile strain and compressive strain

摘要

While (105A, 205A, 305A, 405A) in the active region of the one, to form a semiconductor alloy uniform and substantially continuously (107,207,307,407), (105B, 205B second active region, In order to provide (113B, 213B, and 313B, 401) semiconductor material for the base in the central portion 305B, the 405B), by patterning semiconductor alloy (107,207,307,407) there is distortion of the heterogeneous can be induced. On the other hand, after providing the cover layer corresponding (113A, 213A, 313A, 413A) in the semiconductor material of the base, established process techniques for forming the gate dielectric (122,322,422) is used Ur. In some example embodiments, a self-aligned process substantially is provided. In this process, the gate electrodes (121,221,321,421) is formed on the basis of the layer (208, 308), said layer (208, 308), one (205B, 305B) of the active region it can also be used to define (213B, 313B) and the central portion of the semiconductor material of the base. Therefore, by using semiconductor alloy single (107,207,307,407), performance (120A, 120B) of the transistors of different conductivity types can be improved independently.