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PHOTORESIST COMPOSITION CONTAINING A PROTECTED HYDROXYL GROUP FOR NEGATIVE DEVELOPMENT AND PATTERN FORMING METHOD USING THEREOF
PHOTORESIST COMPOSITION CONTAINING A PROTECTED HYDROXYL GROUP FOR NEGATIVE DEVELOPMENT AND PATTERN FORMING METHOD USING THEREOF
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机译:包含受保护的羟基的光致抗蚀剂组合物,用于负显影,并使用其形成图案的方法
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摘要
The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer, a crosslinking agent and a radiation sensitive acid generator. The imaging polymer includes a monomeric unit having an acid-labile moiety-substituted hydroxyl group. The patterning forming method utilizes an organic solvent developer to selectively remove an unexposed region of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.
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