A pattern forming method using the same, and photoresist compositions, negative development for

摘要

I provide a pattern forming method using the same, and photoresist compositions of the present invention relates for negative development. The invention relates to a patterning process using the photoresist composition and the photoresist composition, can be negative development. Photoresist composition comprises a radiation-sensitive acid generator and imaging polymer. Imaging polymer comprises a monomer unit comprising a second reactive moiety and ether monomer unit, having a first labile pendant moieties acid, isocyanate moiety or part isocyanide. The pattern formation method to form a structure that is patterned in the photoresist layer by selectively removing the unexposed areas of the photoresist layer of a photoresist composition using an organic solvent developer. The photoresist composition and pattern forming method is particularly useful for forming a pattern of material on a semiconductor substrate using a 193nm (ArF) lithography. None [Selection Figure]