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Photoresist composition containing a protected hydroxyl group for negative development and pattern forming method using thereof
Photoresist composition containing a protected hydroxyl group for negative development and pattern forming method using thereof
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机译:包含用于负显影的受保护的羟基的光致抗蚀剂组合物和使用其的图案形成方法
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摘要
The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer, a crosslinking agent and a radiation sensitive acid generator. The imaging polymer includes a monomeric unit having an acid-labile moiety-substituted hydroxyl group. The patterning forming method utilizes an organic solvent developer to selectively remove an unexposed region of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.
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