Plasma etching of boron-doped carbonaceous mask layers with an etchant gas mixture including CxFy or CxHyFz, and at least one of COS and CF3I. Etchant gas mixtures may further include a carbon-free fluorine source gas, such as SF6 or NF3, and/or an oxidizer, such as O2, for higher etch rates. Nitrogen-containing source gases may also be provided in the etchant gas mixture to reduce sidewall bowing in high aspect ratio (HAR) feature etches.
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机译：用包括C x F y 或C x H y y的蚀刻气体混合物对硼掺杂的碳质掩模层进行等离子体蚀刻Sub> F z ，以及COS和CF 3 I中的至少一个。蚀刻剂气体混合物可进一步包含无碳氟源气体，例如SF 6 或NF 3 ，和/或氧化剂，例如O 2 < / Sub>，以获得更高的蚀刻速率。还可在蚀刻剂气体混合物中提供含氮源气体，以减少高深宽比（HAR）特征蚀刻中的侧壁弯曲。
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