Use of SiO2 nanoparticles as etch mask to generate large-area GaAs nanowires by Induced-Coupled Plasma Reactive Ion Etcher

摘要

Large-area GaAs nanowires are fabricated by using SiO₂ nanoparticles as a mask. SiO₂ nanoparticle monolayer is spin-coated on the GaAs substrate and GaAs nanowires are etched by induced-coupled plasma reactive ion etcher.