首页> 中文期刊>等离子体科学与技术:英文版 >Electron Density and Optical Emission Measurements of SF_6/O_2 Plasmas for Silicon Etch Processes

Electron Density and Optical Emission Measurements of SF_6/O_2 Plasmas for Silicon Etch Processes

     

摘要

This work investigates internal plasma process parameters using a hairpin resonance probe and optical emission spectroscopy. The dependence of electron density and atomic fluorine on the percentage of oxygen in an SF6 /O2 discharge was measured using these methods. An RIE Oxford Instruments 80 plus chamber was used for the experiments. Two different process powers (100 W and 300 W) at a constant pressure (100 mTorr) were used, and it was found that the optical emission intensity of the 703.7 nm and 685.6 nm lines of atomic fluorine increased rapidly as oxygen was added to the SF6 discharge, reached their maximum at an O2 fraction of 20% and then decreased with further addition of oxygen. The plasma electron density was also strongly influenced by the addition of O2 .

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号