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Techniques for using material substitution processes to form replacement metal gate electrodes of semiconductor devices with self-aligned contacts
Techniques for using material substitution processes to form replacement metal gate electrodes of semiconductor devices with self-aligned contacts
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机译:使用材料替代工艺形成具有自对准触点的半导体器件的替代金属栅电极的技术
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摘要
Generally, the present disclosure is directed to techniques for using material substitution processes to form replacement metal gate electrodes, and for forming self-aligned contacts to semiconductor devices made up of the same. One illustrative method disclosed herein includes removing at least a dummy gate electrode to define a gate cavity, forming a work-function material in said gate cavity, forming a semiconductor material above said work-function material, and performing a material substitution process on said semiconductor material to substitute a replacement material for at least a portion of said semiconductor material.
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