Novel Materials and Processes in Replacement Metal Gate for Advanced CMOS Technology

摘要

This paper addresses novel approaches at material and integration fronts for gate applications. Material wise, new n work function metal (WFM) material is explored to address the need for reducing gate resistance and maintaining proper Vt at 20Å or less WFM thickness. Integration wise, next generation dipole is tested with various process sequences to address the need in lowering overall thermal budget at the gate level for advanced architectures, such as scaled FinFET and Nanosheets.