PREVENTING BORON PENETRATION THROUGH THIN GATE OXIDE OF P-CHANNEL DEVICES IN ADVANCED CMOS TECHNOLOGY

摘要

A CMOS device and a method for forming the same is provided so as to overcome the problem of boron penetration through the thin gate oxide of P-channel devices. Silicon (210) is implanted into the polysilicon gate electrode (34) of the PMOS device functioning as a diffusion barrier for preventing boron penetration through the thin gate oxide and into the semiconductor substrate. As a result, the reliability of the CMOS device will be enhanced.