NITRIDE SEMICONDUCTOR LAMINATE STRUCTURE, NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT PROVIDED WITH NITRIDE SEMICONDUCTOR LAMINATE STRUCTURE, AND METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR LAMINATE STRUCTURE

摘要

This nitride semiconductor light emitting element is provided with: an n-side electrode (40); a p-side electrode (30); an n-type nitride semiconductor layer (22) that has a nonpolar or semi-polar surface; a p-type nitride semiconductor layer (26) that is electrically connected to the p-side electrode; and an active layer (24) that is sandwiched between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The n-side electrode (40) has an aluminum part, and the aluminum part is in contact with the surface of the n-type nitride semiconductor layer. The nitrogen atom concentration in the surface of the n-type nitride semiconductor layer, said surface being in contact with the aluminum part, is higher than the gallium atom concentration in the surface of the n-type nitride semiconductor layer, said surface being in contact with the aluminum part.