Manufacturing method of nitride semiconductor laminated structure, nitride semiconductor light emitting device and nitride semiconductor laminated structure

摘要

PROBLEM TO BE SOLVED: To provide a technique capable of realizing an AlN template which has small distortion and is suitable for manufacturing an ultraviolet LED. SOLUTION: The sapphire substrate has at least a first AlN layer formed on a main surface of the sapphire substrate and a second AlN layer formed on the first AlN layer, and the second AlN layer is distorted in the a-axis direction. The absolute value of the quantity ε2 is a nitride semiconductor laminated structure smaller than the absolute value of the strain amount ε1 in the a-axis direction of the first AlN layer. [Selection diagram] Fig. 1