Nitride semiconductor laminated structure, a method of manufacturing a semiconductor light emitting device and a nitride semiconductor laminated structure

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor multilayer structure having a low dislocation density, and a method for manufacturing the structure.;SOLUTION: The nitride semiconductor laminate structure includes: a sapphire substrate 100 having an m-plane principal surface having an off angle φ; and a mask layer 121 having first and second side face portions interposing each of a plurality of exposure regions in a direction parallel to the c-axis of the sapphire substrate. On a cross section parallel to the m-axis and c-axis of the sapphire substrate, points where the first and second side face portions of the mask layer meet the principal surface of the sapphire substrate are defined as point A and point B, as well as a point where a straight line passing through point B and making an angle of 58°-φ with respect to the principal surface intersects the first side face portion is defined as point C; and a distance W between a straight line passing through point C and perpendicular to the principal surface and a straight line passing through point B and perpendicular to the principal surface, and a height H of the first side face portion satisfy a relationship of H≥W×tan(58°-φ).;COPYRIGHT: (C)2015,JPO&INPIT