Nitride semiconductor structure, laminated structure, and the nitride semiconductor light-emitting element

摘要

In the nitride semiconductor structure to the m-plane as a principal, a plurality of crystal growing seed region 130 formed of a nitride semiconductor which extends within the following range 0 degrees 10 degrees with respect to a shaft, a plurality of crystal growing seed region comprising a lateral growth region 320b made of a nitride semiconductor that has spread to the c-axis direction from each, adjacent the plurality of crystal growing seed region spacing (S width) is 20μm or more.