首页> 中文期刊> 《红外与毫米波学报》 >MEGAGAUSS SPECTRA OF SEMICONDUCTORS: MERCURYSELENIDE LOW-DIMENSIONAL STRUCTURES IN MAGNETIC FIELDS UP TO 1000 T

MEGAGAUSS SPECTRA OF SEMICONDUCTORS: MERCURYSELENIDE LOW-DIMENSIONAL STRUCTURES IN MAGNETIC FIELDS UP TO 1000 T

         

摘要

Mercuryselenide is a zero-gap semiconductor of Ⅱ- Ⅵ-family. The iron-doped modification HgSe:Fe has a "Fermi-level pinning" beyond the electron concentration of 5 × 1018 cm-3. Due to the short-range correlation of Fe + +/Fe + + +system, a dramatic increase of carrier mobility is observed, so that any quantum effect in 3D, 2D, 1D, and 0D is well detected. Applying molecular-beam epitaxy for the sample preparation, we present magnetospectral data of selected samples of this compound demonstrating various features in magnetic fields up to 1000 T by applying different field generators. The resulting data are explained in connection with suitable theoretical concepts basing on the k * p-method as well as on the tightbinding approximation.

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