Contactless electroreflectance (CER) spectroscopy was applied to study the selected semiconductor nanostructures from the III-nitride and dilute nitride family of semiconductor materials. In the case of III-nitrides, the built-in electric field in AlGaN/GaN heterostructures have been determined by measuring the AlGaN-related Franz-Keldysh oscillation and analyzing its period. In the case of dilute nitrides, the optical transitions between the ground and excited states have been clearly observed in CER spectra of GaInNAsSb/GaAs quantum wells. The conduction band offset for these quantum wells has been found by comparing experimental data with theoretical calculations.
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