NITRIDE SEMICONDUCTOR STRUCTURE, NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, NITRIDE SEMICONDUCTOR TRANSISTOR ELEMENT, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR STRUCTURE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT

摘要

Provided is a nitride semiconductor structure in which a first nitride semiconductor ground layer (4) is provided on a substrate (1) having on the surface thereof recesses (1b) and projections (1a) disposed between the recesses (1b), the first nitride semiconductor ground layer (4) has on the outside of the projections (1a) at least six first inclined facet faces (4r) surrounding the projections (1a), and a second nitride semiconductor ground layer (5) is obtained by embedding the first inclined facet faces (4r) therein. Also provided are nitride semiconductor light-emitting elements (100, 200, 500), nitride semiconductor transistor elements (300, 400, 600), a method for manufacturing the nitride semiconductor structure, and a method for manufacturing nitride semiconductor elements (100, 200, 300, 400, 500, 600).