首页> 外国专利> ION GENERATION DEVICE CAPABLE OF PREVENTING THE DEGRADATION OF ELECTRICAL CHARACTERISTICS DUE TO IMPURITIES AND AN ION IMPLANTATION DEVICE INCLUDING THE SAME

ION GENERATION DEVICE CAPABLE OF PREVENTING THE DEGRADATION OF ELECTRICAL CHARACTERISTICS DUE TO IMPURITIES AND AN ION IMPLANTATION DEVICE INCLUDING THE SAME

机译:能够防止由于杂质引起的电特性劣化的离子产生装置以及包括该离子产生装置的离子植入装置

摘要

PURPOSE: An ion generation device and an ion implantation device including the same prevent unwanted metal impurities from being injected into a substrate in which ions are injected by using a cathode including a non-metallic electron emission unit.;CONSTITUTION: An ion generation device includes a filament (120) for thermionic emission and a cathode (130). The cathode includes a first layer and a second layer. The first layer is heated by thermions emitted from the filament. The second layer is partially in contact with the first layer, emits secondary electrons by energy from the first layer, and prevents the emission of materials in the first layer. The first layer includes metallic materials, and the second layer includes non-metallic materials.;COPYRIGHT KIPO 2013
机译:目的:离子发生装置和包括该离子发生装置的离子注入装置通过使用包括非金属电子发射单元的阴极来防止有害金属杂质注入到注入离子的基板中。用于热电子发射的灯丝(120)和阴极(130)。阴极包括第一层和第二层。第一层被从灯丝发射的热离子加热。第二层与第一层部分地接触,通过来自第一层的能量发射二次电子,并防止第一层中的材料发射。第一层包括金属材料,第二层包括非金属材料。; COPYRIGHT KIPO 2013

著录项

  • 公开/公告号KR20130104585A

    专利类型

  • 公开/公告日2013-09-25

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20120026202

  • 发明设计人 KAMEI SEIJI;

    申请日2012-03-14

  • 分类号H01J37/08;H01J37/317;

  • 国家 KR

  • 入库时间 2022-08-21 16:26:17

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