SEMICONDUCTOR DEVICE FOR HAVING A LOW CONCENTRATION CHANNEL IMPURITY REGION CAPABLE OF PREVENTING THE ELECTRICAL CHARACTERISTIC OF A MOS(METAL OXIDE SEMICONDUCTOR) TRANSISTOR FROM BEING DECREASED

摘要

PURPOSE: A semiconductor device for having a low concentration channel impurity region is provided to minimize hot carrier injection by constituting a channel impurity concentration in a low concentration channel impurity region to be lower than that in a main channel impurity region.;CONSTITUTION: A main channel impurity region(71) has a first channel impurity concentration. The main channel impurity region is provided to the inside of an active region between a drain region(68d) and a source region(68s). A low concentration channel impurity region is formed in the active region which is contiguous to the drain region. The low concentration channel impurity region has the same conductive type as that of the main channel impurity region. The low concentration channel impurity region has lower second channel impurity concentration than the first channel impurity concentration.;COPYRIGHT KIPO 2012