Implantation-Controlled Diffusion of Impurities in Compound Semiconductors with Application to the Fabrication of Microwave Devices.

摘要

This report summarizes research carried out under Contract DAHC04-75-G-0156. The principal results obtained were as follows: (1) A double-layer encapsulant consisting of a layer of As-doped SiO2 deposited on a layer of plasma-deposited Si3N4 was developed for annealing ion-implanted GaAs at temperatures up to 1100 C and InP at temperatures up to 900 C; (2) This encapsulant was used to study the properties of Se-implanted GaAs; (3) The two layer encapsulant was also used to study the annealing behavior of S-implanted Cr-doped InP at temperatures up to 900 C, in which an electrical activity of 68% was obtained on a sample implanted to a dose of 10 to the 14th power S(+)/sq cm at 120 keV and annealed at 900 C for 20 minutes; and (4) A two layer encapsulant composed of an evaporated layer of Ga2S3 covered by an evaporated layer of SiO2 was developed to solve special problems that arise in the annealing of S-implanted GaAs. 100% electrical activity was obtained for ion doses up to 10 to the 13th power/sq cm, annealed at 825 C for 10 minutes.