Nitrogen incorporation by plasma immersion ion implantation on electrical characteristics of high-k gated MOS devices with SiGe channel

摘要

Metal-oxide-semiconductor devices with SiGe channel and nitridation treatment using plasma immersion ion implantation (PIII) were studied in this work. The reliability in terms of stress-induced leakage and stress-induced Vfb shift is improved for device with a PIII treatment. The EOT value of MOS device can be reduced to 9.6 Å by employing 30% Ge content in SiGe channel and PIII nitridation.