Effects of oxygen partial pressure on structural and electrical characteristics of HfAlO high-k gate dielectric grown on strained SiGe by pulsed-laser deposition

摘要

Dependence of oxygen partial pressures on structural and electrical characteristics of HfAlO (Hf:Al=1:1) high-k gate dielectric ultra-thin films grown on the compressively strained Si83Ge17 by pulsed-laser deposition were investigated. The microstructure and the interfacial structure of the HfAlO thin films grown under different oxygen partial pressures were studied by transmission electron microscopy, and the their electrical properties were characterized by capacitance-voltage (C-V) and conductance-voltage measurements. Dependence of interfacial layer thickness and C-V characteristics of the HfAlO films on the growth of oxygen pressure was revealed. With an optimized oxygen partial pressure, an HfAlO film with an effective dielectric constant of 16 and a low interface state density of ∼2.1×1010 cm-2 eV-1 was obtained.