An integrated circuit with a connection produced by a galvanic process with a heat sink and method for this purpose,

摘要

An integrated circuit comprising:a semiconductor substrate (116, 202);a on the semiconductor substrate (116, 202), which first electrical contact (110, 230); andthe way of a compound produced by a galvanic process with the first electrical contact (110, 230) connected to first heatsink element (102, 240).