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Manufacture of through-silicon vias silicon wafer

机译:硅通孔硅晶片的制造

摘要

Method of manufacturing through silicon vias comprises etching a plurality of through holes in the silicon plate. Oxide liner is deposited on the bottom wall and the side wall of the through hole and the surface of the silicon plate. Next, a metal conductor is deposited in the through hole. In another version, it is deposited on the back surface of the silicon nitride passivation layer may be used simultaneously with an oxide liner is exposed the silicon substrate plate. [Selection] Figure Figure 1G
机译:硅通孔的制造方法包括在硅板上蚀刻多个通孔。氧化物衬垫沉积在通孔的底壁和侧壁以及硅板的表面上。接下来,在通孔中沉积金属导体。在另一种形式中,它沉积在氮化硅钝化层的背面上,可以与暴露在硅衬底板上的氧化物衬里同时使用。 [选型]图1G

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