PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS(TSV) WITH HEATED SUBSTRATE AND COOLED ELECTROLYTE

摘要

the present invention , holding the silicon substrate and the silicon substrate is heated to a first temperature a chuck (chuck) and a temperature controller for maintaining the temperature of the electrolytic cell to a second temperature to the first temperature adjusting { is maintained in the range of about 30 to about 60 , the second temperature is (a) at least 5 lower than the first temperature , (b) from about 15 to about 35 maintained in the range of the temperature of the delivery system including a metal plating } , the electrolytic cell comprises a redox mediator (redox mediator) (electrolytic bath) using the present invention relates to a metal via (via) the silicon through-hole (through-silicon vias) (TSV) high aspect ratio in a silicon substrate to form a (aspect ratio) in the method of electrodeposition (electrodepositing). ;