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Method of programming a flash memory device can be used to improve program performance
Method of programming a flash memory device can be used to improve program performance
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机译:可以对闪存设备进行编程的方法来提高程序性能
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摘要
A flash memory device includes a flash memory cell array having flash memory cells arranged with word and bit lines, a word line driver circuit configured to drive the word lines at a selected step increment during a programming operation, a bulk-voltage supply circuit configured to supply a bulk voltage into a bulk of the flash memory cell array and a writing circuit configured to drive the bit lines selected by conditions during a programming operation. A control logic block is configured to control the writing circuit and the bulk-voltage supply circuit during the programming operation. The control logic block is configured to cause the writing circuit and/or the bulk-voltage supply circuit to change at least one of the conditions of the writing circuit and/or the bulk voltage responsive to the selected step increment.
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