In production method of the field-effect transistor, the electronic equipment and the field-effect transistor and with respect to

摘要

PPROBLEM TO BE SOLVED: To provide a field effect transistor not broken regardless of application of overvoltage and overcurrent without over-increasing the chip area. PSOLUTION: In the field effect transistor, a gate electrode 110, a drain electrode 109, a source electrode 108, and a protection diode (a protection diode electrode) 111 are disposed on a semiconductor layer. The drain electrode 109 is formed to surround a part or the entire of the surrounding of the protection diode 111, or a plurality of drain electrodes 109 are provided and formed such that the protection diode 111 is disposed between at least a pair of drain electrodes of the plurality of drain electrodes 109. PCOPYRIGHT: (C)2011,JPO&INPIT