SEMICONDUCTOR SUBSTRATE FOR ELECTRONIC DEVICE, ITS PRODUCTION METHOD, ELECTRONIC DEVICE, AND FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To facilitate the improvement of the operation characteristics of an electronic device.;SOLUTION: By optimizing crystal growth conditions such as a crystal growth temperature, it is possible to effectively suppress the sublimation of atoms which form the top surface of a semiconductor layer 103 (channel layer A), and in this case, the roughening at the interface between semiconductor layers 103 and 104 can be effectively inhibited. The action of inhibiting the roughening at the interface is ascribable, in addition to the optimization of the crystal growth conditions, to the use of a crystal growth substrate 101 which is constituted from an about 400 μm-thick intrinsic GaN crystal (the semiconductor substrate for an electronic device) produced according the production method. This means that it is very effective and important for making flatter the interface between semiconductor crystal layers build up on the substrate by a crystal growth treatment to use a crystal growth substrate of very high crystal quality. The use of this semiconductor substrate for an electronic device is particularly effective also in this sense.;COPYRIGHT: (C)2008,JPO&INPIT