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In the joint structure joint structure and consist of the Cu alloy for wiring sputtering target

机译:在接头结构中,接头结构由用于溅射靶材的铜合金组成

摘要

PROBLEM TO BE SOLVED: To provide a technique by which wiring can be directly formed with Cu alloy on an insulating layer such as glass while saving an adhesion layer of Mo etc. and without applying heat treatment, and by which wiring having the good surface smoothness is formed.;SOLUTION: The Cu alloy for wiring includes by atomic, 0.01-0.5% Bi, 0.05-0.5% In and the balance Cu with inevitable impurities. A connection structure is provided in which an insulating layer is directly joined to Cu alloy wiring, the connection structure is characterized in that: the Cu alloy contains Bi and In and the Cu alloy wiring has a Bi segregated layer which is formed at the joining interface side to the insulating layer.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种技术,通过该技术可以在不进行热处理的情况下,利用Cu合金在诸如玻璃的绝缘层上直接形成布线,同时节省Mo等的粘附层,并且不进行热处理,并且该布线具有良好的表面光滑度溶液:用于布线的铜合金包括0.01-0.5%的Bi,0.05-0.5%的In和其余部分含不可避免的杂质的Cu。提供一种连接结构,其中绝缘层直接连接至Cu合金布线,该连接结构的特征在于:Cu合金包含Bi和In,并且Cu合金布线具有在连接界面处形成的Bi偏析层。侧向绝缘层。;版权:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP5464667B2

    专利类型

  • 公开/公告日2014-04-09

    原文格式PDF

  • 申请/专利权人 三井金属鉱業株式会社;

    申请/专利号JP20100281365

  • 申请日2010-12-17

  • 分类号C22C9/00;H01L21/3205;H01L21/768;H01L23/532;H01L21/285;H01L21/28;C23C14/34;

  • 国家 JP

  • 入库时间 2022-08-21 16:11:20

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