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Adaptively programming or erasing flash memory blocks

机译:对闪存块进行自适应编程或擦除

摘要

Embodiments described herein generally relate to programming and erasing a FLASH memory. In an embodiment, a method of programming or erasing the contents of a block of a FLASH memory includes determining a voltage of a pulse based on an age of the block and outputting the pulse to at least a portion of the block. The pulse is used to program or erase the block.
机译:本文描述的实施例通常涉及编程和擦除FLASH存储器。在一个实施例中,一种编程或擦除FLASH存储器的块的内容的方法包括:基于该块的寿命来确定脉冲的电压,并将该脉冲输出到该块的至少一部分。该脉冲用于编程或擦除该块。

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