Soft error rate (SER) reduction in advanced silicon processes
展开▼
机译:先进硅工艺中的软错误率(SER)降低
展开▼
页面导航
摘要
著录项
相似文献
摘要
Provided is a method of fabricating a semiconductor device. The method includes providing a substrate. The method includes forming a portion of an interconnect structure over the substrate. The portion of the interconnect structure has an opening. The method includes obtaining a boron-containing gas that is free of a boron-10 isotope. The method includes filling the opening with a conductive material to form a contact. The filling of the opening is carried out using the boron-containing gas. Also provided is a semiconductor device. The semiconductor device includes a substrate. The semiconductor device includes an interconnect structure formed over the substrate. The semiconductor device includes a conductive contact formed in the interconnect structure. The conductive contact has a material composition that includes Tungsten and Boron, wherein the Boron is a 11B-enriched Boron.
展开▼